Перегляд за автором "Mitin, V.F."

Сортувати за: Порядок: Результатів:

  • A silicon carbide thermistor 
    Boltovets, N.S.; Kholevchuk, V.V.; Konakova, R.V.; Kudryk, Ya.Ya.; Lytvyn, P.M.; Milenin, V.V.; Mitin, V.F.; Mitin, E.V. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider a silicon carbide thermistor with multilayer Au–TiBx–Ni2Si ohmic contacts intended for operation in the 77 to 450 K temperature range.
  • Microwave diodes with contact metallization systems based on silicides, nitrides and borides of refractory metals 
    Boltovets, N.S.; Basanets, V.V.; Ivanov, V.N.; Krivutsa, V.A.; Tsvir, A.V.; Belyaev, A.E.; Konakova, R.V.; Lyapin, V.G.; Milenin, V.V.; Soloviev, E.A.; Venger, E.F.; Voitsikhovskyi, D.I.; Kholevchuk, V.V.; Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2000)
    We investigated the parameters of silicon and gallium arsenide microwave diodes intended for different functions. Their heat-resistant contacts were made on the base of interstitial phases. A unified technological route ...
  • Ohmic contacts to Hall sensors based on n-InSb-GaAs(i) heterostructures 
    Boltovets, N.S.; Konakova, R.V.; Kudryk, Ya.Ya.; Milenin, V.V.; Mitin, V.F.; Mitin, E.V.; Lytvyn, O.S.; Kapitanchuk, L.M. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2006)
    We consider ohmic contacts to the n-InSb epitaxial layers grown on a semi-insulating GaAs substrate. The ohmic contacts are formed through titanium metallization with subsequent gilding. Using the structural (AFM and XRD) ...
  • Resistance thermometers based on the germanium films 
    Mitin, V.F. (Semiconductor Physics Quantum Electronics & Optoelectronics, 1999)
    The latest achievements in the field of development of resistance thermometers based on the germanium films on gallium arsenide are presented and summarized. Basic models of Ge film thermometers, which cover the temperature ...
  • The features of structural-impurity ordering of interfaces in Ta₂O₅-p-Si heterostructures (exposed to microwave pretreatment and aging) induced by further microwave treatment 
    Kolyadina, E.Yu.; Konakova, R.V.; Matveeva, L.A.; Mitin, V.F.; Shynkarenko, V.V.; Atanassova, E. (Semiconductor Physics Quantum Electronics & Optoelectronics, 2008)
    The effect of short-term microwave treatment (MT) on the electronic properties of interface in the Ta₂O₅−SiOx−p-Si structures has been investigated. The samples of two types were studied: check ones (batch I) and those ...